KINGSTON · NOD-KSM26SED8/16MR

Memorie RAM Notebook KINGSTON KSM26SED8/16MR, 16GB, DDR4, 2666MHz, CL19

Name: Memorie RAM Notebook KINGSTON KSM26SED8/16MR, 16GB, DDR4, 2666MHz, CL19
Brand: KINGSTON
SKU: NOD-KSM26SED8/16MR
Price: 4878 RON
Availability: BackOrder

Memorie RAM Kingston, 16GB, SODIMM, DDR4, 2666Mhz, ECC

4.031 lei

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Total 1 buc.4.031 lei

KINGSTON · StocareDoar pentru firme (B2B)

Memorie RAM Notebook KINGSTON KSM26SED8/16MR, 16GB, DDR4, 2666MHz, CL19

SKU: NOD-KSM26SED8/16MR

Buffered memory type: Unregistered (unbuffered)
Capacitate: 16 GB
CAS latency: 19
Component for: PC/Server
DRAM-Kit: No
ECC: Yes

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4.031 leiprețuri fără TVA

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Retur gratuit 30 de zileFactură fiscală automatăGaranție de producător

BrandKINGSTON

Cod produsNOD-KSM26SED8/16MR

CategorieStocare

Buffered memory typeUnregistered (unbuffered)

Capacitate16 GB

CAS latency19

Component forPC/Server

DRAM-KitNo

ECCYes

Frecventa2666 MHz

Harmonized System (HS) code84733020

Internal memory16 GB

Internal memory typeDDR4

JEDEC standardYes

KitNo

Kit dual channelNu

Kit quad channelNu

Latenta17 - 20 CL

Memory clock speed2666 MHz

Memory data transfer rate2666 MT/s

Memory form factor260-pin SO-DIMM

Memory ranking2

Memory voltage1.2 V

Operating temperature (T-T)0 - 85 °C

Programming power voltage (VPP)2.5 V

Refresh row cycle time350 ns

Row active time32 ns

Row cycle time45.75 ns

SPD profileYes

Storage temperature (T-T)-55 - 100 °C

Supported data transfer ratesPC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600

Tensiune alimentare1.2 V

TipDDR4 SODIMM

Specificații

Brand	KINGSTON
Cod produs	NOD-KSM26SED8/16MR
Categorie	Stocare
Garanție	Se confirmă la ofertare
Livrare	5–7 zile
Buffered memory type	Unregistered (unbuffered)
Capacitate	16 GB
CAS latency	19
Component for	PC/Server
DRAM-Kit	No
ECC	Yes
Frecventa	2666 MHz
Harmonized System (HS) code	84733020
Internal memory	16 GB
Internal memory type	DDR4
JEDEC standard	Yes
Kit	No
Kit dual channel	Nu
Kit quad channel	Nu
Latenta	17 - 20 CL
Memory clock speed	2666 MHz
Memory data transfer rate	2666 MT/s
Memory form factor	260-pin SO-DIMM
Memory ranking	2
Memory voltage	1.2 V
Operating temperature (T-T)	0 - 85 °C
Programming power voltage (VPP)	2.5 V
Refresh row cycle time	350 ns
Row active time	32 ns
Row cycle time	45.75 ns
SPD profile	Yes
Storage temperature (T-T)	-55 - 100 °C
Supported data transfer rates	PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600
Tensiune alimentare	1.2 V
Tip	DDR4 SODIMM